Nano-sized precipitation in high-dose implanted Si has been investigated using high-resolution transmission electron microscopy of cross-sectional specimens (XHRTEM). Zn and Bi (50 keV) have been implanted in Si at doses of 5 × 1016 cm−2 and 1016 cm−2, respectively. In spite of the different diffusivities of these species in Si, their low solubility resulted in precipitation of nano-sized metallic inclusions whose inner structures revealed a synthesis of superlattices, composed of the host Si matrix and the implanted species.
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