Amorphous stoichiometric thin films of TeO2 have been successfully grown by reactive rf-sputtering deposition. The proper choice of deposition parameters such as the rf power, the Ar/O2 composition and pressure of the sputtering gas, the substrate temperature, enabled us to obtain TeOx films of different thickness (up to 2.4 μm) with constant and reproducible optical and structural characteristics. The x value was calculated from RBS measurements to be equal to 2.04 ± 0.08 and all films showed good optical transparency in the visible and near infrared range. The structure of the films was studied by XRD, TEM and SAD, and it was found to be amorphous with the presence of rare and small Te crystallites.
Rf-sputtering growth of stoichiometric amorphous TeO2 thin films
DI GIULIO, Massimo;
2005-01-01
Abstract
Amorphous stoichiometric thin films of TeO2 have been successfully grown by reactive rf-sputtering deposition. The proper choice of deposition parameters such as the rf power, the Ar/O2 composition and pressure of the sputtering gas, the substrate temperature, enabled us to obtain TeOx films of different thickness (up to 2.4 μm) with constant and reproducible optical and structural characteristics. The x value was calculated from RBS measurements to be equal to 2.04 ± 0.08 and all films showed good optical transparency in the visible and near infrared range. The structure of the films was studied by XRD, TEM and SAD, and it was found to be amorphous with the presence of rare and small Te crystallites.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
