DRIGO, Antonio
 Distribuzione geografica
Continente #
EU - Europa 463
NA - Nord America 150
AS - Asia 95
Continente sconosciuto - Info sul continente non disponibili 1
Totale 709
Nazione #
IT - Italia 190
IE - Irlanda 163
US - Stati Uniti d'America 149
SE - Svezia 53
HK - Hong Kong 36
UA - Ucraina 31
CN - Cina 23
SG - Singapore 14
FI - Finlandia 11
IN - India 11
JP - Giappone 8
BE - Belgio 4
RU - Federazione Russa 3
DE - Germania 2
GB - Regno Unito 2
TR - Turchia 2
CA - Canada 1
CZ - Repubblica Ceca 1
EU - Europa 1
FR - Francia 1
IR - Iran 1
LT - Lituania 1
RO - Romania 1
Totale 709
Città #
Lecce 182
Dublin 163
Hong Kong 36
Jacksonville 20
Chandler 11
Princeton 10
Singapore 10
Wayanad 10
Kent 9
Tokyo 8
Ann Arbor 6
Pavia 6
Des Moines 5
Wilmington 5
Brussels 3
Jinan 3
San Mateo 3
Shenyang 3
Kocaeli 2
Saint Petersburg 2
West Jordan 2
Anderlecht 1
Ardabil 1
Augusta 1
Bangalore 1
Boardman 1
Brno 1
Changsha 1
Haikou 1
Hebei 1
Helsinki 1
Jiaxing 1
Lanzhou 1
Leawood 1
London 1
Munich 1
Nanjing 1
Ningbo 1
Ogden 1
Timisoara 1
Toronto 1
Yicheng 1
Zhengzhou 1
Totale 521
Nome #
Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy 101
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 73
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 71
Direct Laser Synthesis of Thin Silicon and Germanium Nitride/Oxinitride Layers. 70
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 69
Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100)GaAs 68
Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometry 68
Preparation and characterization of In2Se3 crystals 67
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 64
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy 60
Totale 711
Categoria #
all - tutte 4.759
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.759


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202056 0 0 0 0 0 0 23 19 3 0 10 1
2020/2021101 10 0 11 10 15 10 1 11 0 13 10 10
2021/202249 1 9 3 9 4 0 1 5 0 2 1 14
2022/2023235 14 16 13 1 4 9 8 3 165 0 2 0
2023/202497 7 7 5 11 14 0 0 0 3 13 34 3
2024/202555 0 0 3 0 11 39 2 0 0 0 0 0
Totale 711