Sfoglia per Autore
Migration Energy of Interstitial Ions in Si end Ge
1982-01-01 Pennetta, Cecilia; A., Baldereschi
Photoconductivity and Trapping Parameters in Hydrogenated Amorphous Silicon Films
1983-01-01 S., Galassini; Micocci, Gioacchino; Pennetta, Cecilia; A., Rizzo; Tepore, Antonio; F., Zuanni
A Total-Energy Study of Proton Diffusion in Crystalline Silicon
1989-01-01 Pennetta, Cecilia
Study of a Positive Hydrogen Ion in Crystalline Si
1989-01-01 Pennetta, Cecilia; A., Baldereschi
Positron Energy Bands and Wave Functions in a Si Crystal
1989-01-01 Pennetta, Cecilia; A., Baldereschi
Quantum Behaviour of Muons in Crystalline Si
1990-01-01 Pennetta, Cecilia; A., Baldereschi
Mass Dependence of the Ground State of Charged Particles in a Silicon Crystal
1991-01-01 Pennetta, Cecilia; A., Baldereschi
Behaviour of a Positive Hydrogen Ion in Crystalline Si
1991-01-01 Pennetta, Cecilia
Work Function and Energy Levels of Positrons in Crystalline Si
1991-01-01 Pennetta, Cecilia
Work function and energy levels of positrons in crystalline silicon
1991-01-01 Pennetta, C.
Biased Percolation and Abrupt Failure of Electronic Devices
1996-01-01 Z., Gingl; Pennetta, Cecilia; L. B., Kiss; L., Reggiani
An Extended Analysis of Noise and Resistance Degradation within the Biased Percolation Model
1996-01-01 Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino
Advances in Noise Modelling of High-Field Transport in Semiconductor Materials and Structures
1996-01-01 Reggiani, Lino; P., Golinelli; A., Greiner; Pennetta, Cecilia; V., Gruzinskis; E., Starikov; P., Shiktorov; L., Varani; J. C., Vaissiere; J. P., Nougier; D., Pardo; T., Gonzalez; M. J., Martin; J. E., Velazquez
Mechanisms of Breakdown in Semi-Insulating GaAs Detectors Under High Reverse Bias Conditions Studied by EBIC and OBIC
1997-01-01 Mazzer, M.; Cola, A.; Vasanelli, Lorenzo; DE VITTORIO, M.; Pennetta, Cecilia; Reggiani, Lino
Biased Percolation and Electrical Breakdown
1997-01-01 Pennetta, Cecilia; Z., Gingl; L. B., Kiss; L., Reggiani
Microscopic Description of Diffusion Noise Sources
1997-01-01 P., Shiktorov; E., Starikov; V., Gruzinskis; Reggiani, Lino; Pennetta, Cecilia; T., Gonzalez; J., Mateos; D., Pardo; L., Varani
Biased Percolation and Noise Analysis of Electrical Breakdown
1997-01-01 Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino
Biased Percolation Model for the Analysis of Electronic Device Degradation
1997-01-01 Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino
Microscopic Interpretation of the Noise-Temperature Spectrum in Two-Terminal Devices
1997-01-01 Reggiani, Lino; Pennetta, Cecilia; V., Gruzinskis; P., Shiktorov; E., Starikov; L., Varani
A Numerical Simulation of Excess Noise for Degradation and Failure of Thin Film Resistors
1997-01-01 Pennetta, Cecilia; Z., Gingl; L. B., Kiss; Reggiani, Lino
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Migration Energy of Interstitial Ions in Si end Ge | 1-gen-1982 | Pennetta, Cecilia; A., Baldereschi | |
Photoconductivity and Trapping Parameters in Hydrogenated Amorphous Silicon Films | 1-gen-1983 | S., Galassini; Micocci, Gioacchino; Pennetta, Cecilia; A., Rizzo; Tepore, Antonio; F., Zuanni | |
A Total-Energy Study of Proton Diffusion in Crystalline Silicon | 1-gen-1989 | Pennetta, Cecilia | |
Study of a Positive Hydrogen Ion in Crystalline Si | 1-gen-1989 | Pennetta, Cecilia; A., Baldereschi | |
Positron Energy Bands and Wave Functions in a Si Crystal | 1-gen-1989 | Pennetta, Cecilia; A., Baldereschi | |
Quantum Behaviour of Muons in Crystalline Si | 1-gen-1990 | Pennetta, Cecilia; A., Baldereschi | |
Mass Dependence of the Ground State of Charged Particles in a Silicon Crystal | 1-gen-1991 | Pennetta, Cecilia; A., Baldereschi | |
Behaviour of a Positive Hydrogen Ion in Crystalline Si | 1-gen-1991 | Pennetta, Cecilia | |
Work Function and Energy Levels of Positrons in Crystalline Si | 1-gen-1991 | Pennetta, Cecilia | |
Work function and energy levels of positrons in crystalline silicon | 1-gen-1991 | Pennetta, C. | |
Biased Percolation and Abrupt Failure of Electronic Devices | 1-gen-1996 | Z., Gingl; Pennetta, Cecilia; L. B., Kiss; L., Reggiani | |
An Extended Analysis of Noise and Resistance Degradation within the Biased Percolation Model | 1-gen-1996 | Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino | |
Advances in Noise Modelling of High-Field Transport in Semiconductor Materials and Structures | 1-gen-1996 | Reggiani, Lino; P., Golinelli; A., Greiner; Pennetta, Cecilia; V., Gruzinskis; E., Starikov; P., Shiktorov; L., Varani; J. C., Vaissiere; J. P., Nougier; D., Pardo; T., Gonzalez; M. J., Martin; J. E., Velazquez | |
Mechanisms of Breakdown in Semi-Insulating GaAs Detectors Under High Reverse Bias Conditions Studied by EBIC and OBIC | 1-gen-1997 | Mazzer, M.; Cola, A.; Vasanelli, Lorenzo; DE VITTORIO, M.; Pennetta, Cecilia; Reggiani, Lino | |
Biased Percolation and Electrical Breakdown | 1-gen-1997 | Pennetta, Cecilia; Z., Gingl; L. B., Kiss; L., Reggiani | |
Microscopic Description of Diffusion Noise Sources | 1-gen-1997 | P., Shiktorov; E., Starikov; V., Gruzinskis; Reggiani, Lino; Pennetta, Cecilia; T., Gonzalez; J., Mateos; D., Pardo; L., Varani | |
Biased Percolation and Noise Analysis of Electrical Breakdown | 1-gen-1997 | Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino | |
Biased Percolation Model for the Analysis of Electronic Device Degradation | 1-gen-1997 | Z., Gingl; Pennetta, Cecilia; L. B., Kiss; Reggiani, Lino | |
Microscopic Interpretation of the Noise-Temperature Spectrum in Two-Terminal Devices | 1-gen-1997 | Reggiani, Lino; Pennetta, Cecilia; V., Gruzinskis; P., Shiktorov; E., Starikov; L., Varani | |
A Numerical Simulation of Excess Noise for Degradation and Failure of Thin Film Resistors | 1-gen-1997 | Pennetta, Cecilia; Z., Gingl; L. B., Kiss; Reggiani, Lino |
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