Core-(multi)shell nanowires (NWs) based on III-N-V semiconductors have potential applications to high-efficiency solar cells and NIR-emitting laser devices. However, III-N-V compounds are highly mismatched alloys, and their fabrication requires growth conditions far from equilibrium. We report for the first time on the low-pressure MOVPE of GaAs-GaNAs core-shell NWs using tertiary‑butyl‑hydrazine as N-precursor, along with trimetyl-gallium, trimetyl-aluminum and tertiarybutyl-arsine. GaAs-GaNAs NWs were studied by FE-SEM and PL spectroscopy. The results show that N-content and NW diameters decrease with the NW array density; this is ascribable to a change of GaNAs shell growth rate with the NW density on the substrate.
GaAs-GaNAs core-shell nanowires growth by MOVPE
Garzia, L;Marzo, F;Tapfer, L;Prete, P;Lovergine N
2025-01-01
Abstract
Core-(multi)shell nanowires (NWs) based on III-N-V semiconductors have potential applications to high-efficiency solar cells and NIR-emitting laser devices. However, III-N-V compounds are highly mismatched alloys, and their fabrication requires growth conditions far from equilibrium. We report for the first time on the low-pressure MOVPE of GaAs-GaNAs core-shell NWs using tertiary‑butyl‑hydrazine as N-precursor, along with trimetyl-gallium, trimetyl-aluminum and tertiarybutyl-arsine. GaAs-GaNAs NWs were studied by FE-SEM and PL spectroscopy. The results show that N-content and NW diameters decrease with the NW array density; this is ascribable to a change of GaNAs shell growth rate with the NW density on the substrate.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
