Semiconductor nanowires (NWs) based solar cells (SCs) have long been considered a promising answer to the urgent demand for renewable and sustainable energy sources with higher efficiencies, lower costs and reduced dimensions. Here, a new type of high-efficiency nanowire-based solar cells relying on intermediate band (IB) III-N-V semiconducting alloys (e.g., GaNAs or GaNP) within a radial GaAs-AlGaAs NW hetero-structure is proposed; thanks to the combination of IB functionality with the unique physical properties associated with nanowires-based devices, SCs reaching theoretical PCE figures up to 56% at 1000 sun could be conceived. Light wave-guiding and nano-antenna effects in suitably designed NWs can further raise these figures, while reducing the amount of costly III-V materials. Present findings open the way to the future fabrication of high-efficient nanowire-based solar cells.
III-N-V based core-(multi)shell nanowires for photovoltaics
Prete, P
;Lovergine, N
2025-01-01
Abstract
Semiconductor nanowires (NWs) based solar cells (SCs) have long been considered a promising answer to the urgent demand for renewable and sustainable energy sources with higher efficiencies, lower costs and reduced dimensions. Here, a new type of high-efficiency nanowire-based solar cells relying on intermediate band (IB) III-N-V semiconducting alloys (e.g., GaNAs or GaNP) within a radial GaAs-AlGaAs NW hetero-structure is proposed; thanks to the combination of IB functionality with the unique physical properties associated with nanowires-based devices, SCs reaching theoretical PCE figures up to 56% at 1000 sun could be conceived. Light wave-guiding and nano-antenna effects in suitably designed NWs can further raise these figures, while reducing the amount of costly III-V materials. Present findings open the way to the future fabrication of high-efficient nanowire-based solar cells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
