The use of intermediate band (IB) III-N-V semiconducting alloys (such as GaNAs or GaNP) within a free-standing III-V nanowire hetero-structure may lead to the fabrication of a novel type of highly efficient nanowire-based solar cells. We report for the first time on the successful MOVPE growth of GaAs-GaNAs core-(multishell) nanowires using tertiary‑butyl‑hydrazine, as its relatively weak tertiarybutyl-N bond makes this molecule less stable with respect to commonly employed N-precursors.
MOVPE growth of GaAs-GaNAs core-shell nanowires for intermediate-band nanowire solar cells
Garzia Lucia
;Prete Paola
Co-primo
;Marzo Fabio;Tapfer Leander;Lovergine NicoUltimo
2025-01-01
Abstract
The use of intermediate band (IB) III-N-V semiconducting alloys (such as GaNAs or GaNP) within a free-standing III-V nanowire hetero-structure may lead to the fabrication of a novel type of highly efficient nanowire-based solar cells. We report for the first time on the successful MOVPE growth of GaAs-GaNAs core-(multishell) nanowires using tertiary‑butyl‑hydrazine, as its relatively weak tertiarybutyl-N bond makes this molecule less stable with respect to commonly employed N-precursors.File in questo prodotto:
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ICCGE21 - Section F - Abstract Talk GARZIA.pdf
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Descrizione: ICCGE-21 Abstract Talk Garzia et al
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