We present a photodetector that employs a doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of photogenerated electrons. Devices with two doping levels are compared that show the direct effect of the aiding field since all other (optical) parameters remain unchanged. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and onwafer frequency domain measurements are reported showing that the device can operate in tens of Giga- Hertz range with low dark current and high responsivity. Small signal model based on frequency domain data is also extracted in order to facilitate photoreceiver design.

Photodetector with Internal Aiding Field Based-on GaAs/AlGaAs Heterostructures

CATALDO, Andrea Maria
2002-01-01

Abstract

We present a photodetector that employs a doped GaAs/AlGaAs heterojunction for the dual purpose of barrier height enhancement and creating an internal electric field that aids in the transport and collection of photogenerated electrons. Devices with two doping levels are compared that show the direct effect of the aiding field since all other (optical) parameters remain unchanged. Current-voltage, current-temperature, photocurrent spectra, high-speed time response, and onwafer frequency domain measurements are reported showing that the device can operate in tens of Giga- Hertz range with low dark current and high responsivity. Small signal model based on frequency domain data is also extracted in order to facilitate photoreceiver design.
2002
88-900847-8-2
88-900847-8-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/406591
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