Optical and electron beam induced current have been used to characterise a semi-insulating-GaAs Schottky diode for x-ray detection. The anomalies in the electrical response of the device under high reverse bias conditions are explained by showing that the non uniformity of the Schottky barrier is amplified by the applied voltage leading to the formation of low resistivity channels across the device which anticipate the electrical breakdown.
Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBIC
VASANELLI, Lorenzo;DE VITTORIO, Massimo;PENNETTA, Cecilia;
1997-01-01
Abstract
Optical and electron beam induced current have been used to characterise a semi-insulating-GaAs Schottky diode for x-ray detection. The anomalies in the electrical response of the device under high reverse bias conditions are explained by showing that the non uniformity of the Schottky barrier is amplified by the applied voltage leading to the formation of low resistivity channels across the device which anticipate the electrical breakdown.File in questo prodotto:
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