We present the first observation of Quantum Confined Stark Effect in V-shaped InGaAs/GaAs quantum wires grown by MOCVD. P-i-n diodes with vertically staked quantum wires in the intrinsic region exhibit Stark threshold of the order of -2 V at room temperature and low temperature electroluminescence with a threshold current as low as 100 mu A under c.w. injection.
Quantum confined stark effect in V-shaped quantum wires
RINALDI, Rosaria;DE VITTORIO, Massimo;CINGOLANI, Roberto
1997-01-01
Abstract
We present the first observation of Quantum Confined Stark Effect in V-shaped InGaAs/GaAs quantum wires grown by MOCVD. P-i-n diodes with vertically staked quantum wires in the intrinsic region exhibit Stark threshold of the order of -2 V at room temperature and low temperature electroluminescence with a threshold current as low as 100 mu A under c.w. injection.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
