Disorder and spectral broadening of vertically-stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of micro-probe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40*40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron-scale.
Investigation of size fluctuations in quantum wires by micro-luminescence
CINGOLANI, Roberto;RINALDI, Rosaria;DE VITTORIO, Massimo;
1998-01-01
Abstract
Disorder and spectral broadening of vertically-stacked InGaAs/GaAs V-grooved quantum wires have been investigated by means of micro-probe luminescence. We show that the main spectral broadening mechanism originates from monolayer fluctuations at the bottom of the wire. A direct evidence of monolayer height islands of area 40*40 nm formed at the bottom of the grooves is provided by atomic force microscopy. Lateral and vertical wire-to-wire fluctuations are found to be negligible on the micron-scale.File in questo prodotto:
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