In this work, a field effect transistor based on deoxyguanosine derivatives (a DNA basis) is demonstrated by means of systematic transport experiments. Our nanodevices were fabricated starting from a deoxyguanosine derivative (dG(C-10)(2)) layer interconnecting planar nano-electrodes, with separation in the 20-40nm range. The three terminal devices exhibit a maximum voltage gain of 0.76. Though the quick aging and the reproducibility of the devices have to be improved, the realization of a transistor-like device represents a starting point towards the development of planar solid-state bio-molecular electronic devices.

Hybrid molecular electronic (HME) transistor based on deoxyguanosine derivatives

MARUCCIO, Giuseppe;VISCONTI, Paolo;ARIMA, VALENTINA;D'AMICO, STEFANO;BIASCO, Adriana Lucia Angela;CINGOLANI, Roberto;RINALDI, Rosaria;
2003-01-01

Abstract

In this work, a field effect transistor based on deoxyguanosine derivatives (a DNA basis) is demonstrated by means of systematic transport experiments. Our nanodevices were fabricated starting from a deoxyguanosine derivative (dG(C-10)(2)) layer interconnecting planar nano-electrodes, with separation in the 20-40nm range. The three terminal devices exhibit a maximum voltage gain of 0.76. Though the quick aging and the reproducibility of the devices have to be improved, the realization of a transistor-like device represents a starting point towards the development of planar solid-state bio-molecular electronic devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/372344
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