The fundamental laws and mechanisms behind vapour phase epitaxy (VPE) are illustrated and discussed, along with different methods and reactor architectures currently used for the growth of both elemental (Si) and compound (III-V, III-N and II-VI) semiconductors for micro- and optoelectronic devices; applications of cloride-, hydride- and metalorganic-VPE are also discussed.
Principles of VPE and MOVPE and applications
LOVERGINE, Nicola
1998-01-01
Abstract
The fundamental laws and mechanisms behind vapour phase epitaxy (VPE) are illustrated and discussed, along with different methods and reactor architectures currently used for the growth of both elemental (Si) and compound (III-V, III-N and II-VI) semiconductors for micro- and optoelectronic devices; applications of cloride-, hydride- and metalorganic-VPE are also discussed.File in questo prodotto:
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