We report on the photoluminescence (PL) of GaAs-Al0.32Ga0.68As core-shell nanowires grown by MOVPE, and its dependence on the precursors V:III molar ratio utilized in the vapor during growth. It is shown that the PL emission of the GaAs nanowire core red-shifts with decreasing the V:III ratio from 30:1 to 4:1, an effect tentatively ascribed to the build-up of a space-charge region at the core-shell hetero-interface, the latter associated to the unintentional incorporation of impurities, namely C in GaAs and Si in AlGaAs.
On the Luminescence of VLS-grown GaAs-AlGaAs Core-Shell Nanowires and its Dependence on MOVPE Growth Conditions
LOVERGINE, Nicola;MICCOLI, ILIO;MARZO, Fabio;
2010-01-01
Abstract
We report on the photoluminescence (PL) of GaAs-Al0.32Ga0.68As core-shell nanowires grown by MOVPE, and its dependence on the precursors V:III molar ratio utilized in the vapor during growth. It is shown that the PL emission of the GaAs nanowire core red-shifts with decreasing the V:III ratio from 30:1 to 4:1, an effect tentatively ascribed to the build-up of a space-charge region at the core-shell hetero-interface, the latter associated to the unintentional incorporation of impurities, namely C in GaAs and Si in AlGaAs.File in questo prodotto:
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