We have previously reported the time response of a delta-doped heterostructure metal-semiconductor-metal photodetector (HMSM-PD) with FWHM of 11ps for a 4 mum finger gap device [1]. Comparison of the delta-doped and undoped devices shows improved performance due to the delta-doping. In this paper, we simulate the device dynamics behavior using Ramo's theorem. Results show that the introduction of a delta-doping layer significantly changes the two dimensional potential and field profiles from horizontally oriented to vertically oriented ones due to the screening effect of the highly crowded two dimensional electron gas (2DEG) formed along the interface of heterojunction, which reduces the carrier travel distance hence the transit time of carriers in the device. With this knowledge, we expect to achieve high speed performance without further scaling down of the device.
Study of Dynamic Behavior of delta-doped HMSM Photodetector
CATALDO, Andrea Maria;
2003-01-01
Abstract
We have previously reported the time response of a delta-doped heterostructure metal-semiconductor-metal photodetector (HMSM-PD) with FWHM of 11ps for a 4 mum finger gap device [1]. Comparison of the delta-doped and undoped devices shows improved performance due to the delta-doping. In this paper, we simulate the device dynamics behavior using Ramo's theorem. Results show that the introduction of a delta-doping layer significantly changes the two dimensional potential and field profiles from horizontally oriented to vertically oriented ones due to the screening effect of the highly crowded two dimensional electron gas (2DEG) formed along the interface of heterojunction, which reduces the carrier travel distance hence the transit time of carriers in the device. With this knowledge, we expect to achieve high speed performance without further scaling down of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
