In this work the experimental and simulation results of photoemission studies for photoelectrons are presented. The cathode used was a Zn disc having a work function of 4.33 eV. Two different excimer lasers were employed as energy source to apply the photoelectron process: XeCl (308 nm, 10 ns) and KrF (248nm, 23ns). Experimental parameters were the laser fluence (up to 70 mJ/cm2) and the anode-cathode voltage (up to 20 kV). The output current was detected by a resistive shunt having the same value of the characteristic impedance of the system. The best values of global quantum efficiency were approximately 5x10-6 for XeCl and 1x10-4 for KrF laser, while the peaks of the temporal quantum efficiency were 8x10-6 and 1.4x10-4, respectively. The higher efficiency for KrF is ascribed to higher photon energy and to Schottky effect. To enhance the Schottky effect, several electron-beam simulations using OPERA 3-D were carried out to analyze the influence of the geometrical characteristics of the diode.

Temporal quantum efficiency of a micro-structured cathode

NASSISI, Vincenzo;BELLONI, fabio;CARETTO, GIUSEPPE;DORIA, Domenico;LORUSSO, ANTONELLA;MARTINA, Luigi;SICILIANO, MARIA VITTORIA
2006-01-01

Abstract

In this work the experimental and simulation results of photoemission studies for photoelectrons are presented. The cathode used was a Zn disc having a work function of 4.33 eV. Two different excimer lasers were employed as energy source to apply the photoelectron process: XeCl (308 nm, 10 ns) and KrF (248nm, 23ns). Experimental parameters were the laser fluence (up to 70 mJ/cm2) and the anode-cathode voltage (up to 20 kV). The output current was detected by a resistive shunt having the same value of the characteristic impedance of the system. The best values of global quantum efficiency were approximately 5x10-6 for XeCl and 1x10-4 for KrF laser, while the peaks of the temporal quantum efficiency were 8x10-6 and 1.4x10-4, respectively. The higher efficiency for KrF is ascribed to higher photon energy and to Schottky effect. To enhance the Schottky effect, several electron-beam simulations using OPERA 3-D were carried out to analyze the influence of the geometrical characteristics of the diode.
2006
9789290832782
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/116742
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