The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue-green optoelectronics, as well as narrow-gap compounds for infrared detectors. The growth of multilayer heterostructures, including multiple quantum wells (MQWs), and superlattices (SLs), has been demonstrated for many of these materials. In this article, the MOCVD process of II-VIs is illustrated along with the associated growth mechanisms. To grow device-quality II-VIs, several requirements must be met by the MOCVD process: reduced growth temperatures, high purity, efficient n- and p-type doping, and high crystalline and optical properties. Established solutions and current limitations of the technology are pointed out.
MOCVD of II-VI compounds
LOVERGINE, Nicola
2001-01-01
Abstract
The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue-green optoelectronics, as well as narrow-gap compounds for infrared detectors. The growth of multilayer heterostructures, including multiple quantum wells (MQWs), and superlattices (SLs), has been demonstrated for many of these materials. In this article, the MOCVD process of II-VIs is illustrated along with the associated growth mechanisms. To grow device-quality II-VIs, several requirements must be met by the MOCVD process: reduced growth temperatures, high purity, efficient n- and p-type doping, and high crystalline and optical properties. Established solutions and current limitations of the technology are pointed out.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
