A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks ~at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV! were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.
Unusual luminescence lines in GaN
VISCONTI, Paolo;
2003-01-01
Abstract
A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks ~at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV! were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
